This inventor holds 8 USPTO granted patents and 8 published patent applications. Top assignees: Micron Technology Incorporated, Sony Semiconductor Solutions Corporation. Active years: 2015-2023.
Company Filing History:

Years Active: 2015-2023
Title: Muralikrishnan Balakrishnan: Innovator in Memory Cell Technology
Introduction
Muralikrishnan Balakrishnan is a prominent inventor based in Boise, ID (US). He has made significant contributions to the field of memory cell technology, holding a total of 8 patents. His work focuses on innovative designs that enhance the performance and efficiency of memory cells.
Latest Patents
One of his latest patents involves memory cells comprising ferroelectric material and includes current leakage paths having different total resistances. This invention describes a memory cell that features a capacitor with a first conductive capacitor electrode and a second conductive capacitor electrode. The design incorporates ferroelectric material and intrinsic current leakage paths, which improve the overall functionality of the memory cell. Another notable patent details integrated memory having non-ohmic devices and capacitors. This invention includes a memory cell with a non-ohmic device that changes conductivity in response to electrical properties along the channel region, enhancing the performance of memory arrays.
Career Highlights
Muralikrishnan has worked with leading companies in the technology sector, including Micron Technology Incorporated and Sony Semiconductor Solutions Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.
Collaborations
Muralikrishnan has collaborated with notable professionals in his field, including Durai Vishak Nirmal Ramaswamy and Beth R Cook. These collaborations have contributed to the advancement of his research and inventions.
Conclusion
Muralikrishnan Balakrishnan is a key figure in the development of advanced memory cell technologies. His innovative patents and collaborations reflect his commitment to enhancing the capabilities of memory systems.