The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
May. 21, 2014
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Muralikrishnan Balakrishnan, Boise, ID (US);
Zailong Bian, Boise, ID (US);
Gowrisankar Damarla, Boise, ID (US);
Hongqi Li, Boise, ID (US);
Jin Lu, Boise, ID (US);
Shyam Ramalingam, Boise, ID (US);
Xiaoyun Zhu, Boise, ID (US);
Assignee:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/48 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1683 (2013.01); H01L 21/3212 (2013.01); H01L 21/4817 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/085 (2013.01); H01L 45/12 (2013.01); H01L 45/122 (2013.01); H01L 45/1233 (2013.01); H01L 45/16 (2013.01);
Abstract
Exemplary embodiments of the present invention are directed towards a method for fabricating a semiconductor memory device comprising selectively depositing a material to form a cap above a recessed cell structure in order to prevent degradation of components inside the cell structure in oxidative or corrosive environments.