Mousumi Bhat

Title: Innovations of Mousumi Bhat in Semiconductor Technology

Introduction

Mousumi Bhat is a prominent inventor based in Singapore, known for her significant contributions to semiconductor technology. With a total of 4 patents, she has developed innovative methods that enhance the performance and efficiency of semiconductor devices.

Latest Patents

One of her latest patents is titled "Dual step source/drain extension junction anneal to reduce the junction depth: multiple-pulse low energy laser anneal coupled with rapid thermal anneal." This process describes the formation of semiconductor devices such as MOSFETs or CMOS with shallow junctions in the source/drain extension regions. The method involves several steps, including the removal of sidewall dielectric spacers, a pre-amorphizing implant, and the use of multiple-pulsed laser annealing to activate boron dopants, ultimately yielding shallower junctions.

Another notable patent is the "Method to lower work function of gate electrode through Ge implantation." This invention outlines a technique for forming selective P-type and N-type gates. It includes the growth of a gate oxide layer, the deposition of a polysilicon layer, and the implantation of germanium ions to create a polysilicon-germanium layer. The process allows for the formation of NMOS and PMOS gates, enhancing the functionality of semiconductor devices.

Career Highlights

Mousumi Bhat is currently employed at Chartered Semiconductor Manufacturing Ltd, where she continues to innovate in the field of semiconductor technology. Her work has significantly impacted the development of advanced semiconductor devices, making her a key figure in the industry.

Collaborations

Mousumi has collaborated with notable coworkers, including Byung Jin Cho and Alex See, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Mousumi Bhat's innovative work in semiconductor technology, particularly her recent patents, showcases her expertise and dedication to advancing the field. Her contributions are vital for the ongoing development of efficient and high-performance semiconductor devices.