Mousumi Bhat

Title: Innovations of Mousumi Bhat

Introduction

Mousumi Bhat is a prominent inventor based in Austin, TX, known for her significant contributions to semiconductor technology. With a total of seven patents to her name, she has made remarkable advancements in the field of memory cells and semiconductor devices.

Latest Patents

Her latest patents include a semiconductor device that features a memory array of static-random-access memory (SRAM) cells. These SRAM cells are uniquely formed using a process flow typically associated with logic-type devices, allowing for a more efficient design. The innovative approach enables the SRAM cells to be scaled down to very small dimensions, potentially reaching sizes less than 0.25 microns, and even down to 0.1 microns or smaller. Additionally, her patent on contact structure and process for formation addresses the elimination of electrical shorts and leakage paths by strategically recessing conductive nodules away from conductors.

Career Highlights

Mousumi has worked with notable companies such as Motorola Corporation and Texas Instruments Corporation, where she has honed her expertise in semiconductor technology. Her work has been instrumental in advancing the capabilities of memory devices.

Collaborations

Throughout her career, she has collaborated with esteemed colleagues, including Michael P. Woo and Michael C. Smayling, contributing to various innovative projects in the semiconductor field.

Conclusion

Mousumi Bhat's contributions to semiconductor technology and her innovative patents highlight her role as a leading inventor in the industry. Her work continues to influence advancements in memory cell design and semiconductor processes.