Mor Baram

Title: Mor Baram: Innovator in Semiconductor Technology

Introduction

Mor Baram is a notable inventor based in Nes-Ziona, Israel. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work focuses on improving measurement techniques that are crucial for the advancement of semiconductor manufacturing.

Latest Patents

One of Mor Baram's latest patents involves an improved technique for determining height differences in patterns on semiconductor wafers. This innovative method utilizes real measurements, such as those obtained from scanning electron microscope (SEM) images, along with a height difference determination model. In one version of the model, a measurable variable is expressed as a function of a change in the depth of shadow, which is influenced by both height and width differences between features on a semiconductor wafer. Another version of the model expresses the measurable variable in terms of a change in the distance between two characteristic points on the real image of a periodic structure, relative to a change in the tilt angle of a scanning electron beam.

Career Highlights

Mor Baram is currently employed at Applied Materials Israel Limited, where he continues to develop and refine technologies that enhance semiconductor manufacturing processes. His expertise in this area has positioned him as a valuable asset to his company and the industry at large.

Collaborations

Throughout his career, Mor has collaborated with talented individuals such as Ishai Schwarzband and Doron Girmonsky. These partnerships have fostered innovation and contributed to the successful development of his patented technologies.

Conclusion

Mor Baram's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to pave the way for advancements in semiconductor manufacturing techniques.