The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
May. 17, 2018
Applied Materials Israel Ltd., Rehovot, IL;
Ishai Schwarzband, Or-Yehuda, IL;
Yan Avniel, Rehovot, IL;
Sergey Khristo, Ashdod, IL;
Mor Baram, Nes-Ziona, IL;
Shimon Levi, Kiryat-Tivon, IL;
Doron Girmonsky, Raanana, IL;
Roman Kris, Jerusalem, IL;
APPLIED MATERIALS ISRAEL LTD., Rehovot, IL;
Abstract
An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.