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For the Inventor, By the Inventor

Yongin-si, South Korea

Moosung Kim

USPTO Granted Patents = 19 

Average Co-Inventor Count = 2.2

ph-index = 7

Forward Citations = 109(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2011)
  • Yongin-si, KR (2011 - 2019)

Company Filing History:

goldMedal19 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2011-2025

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19 patents (USPTO):Explore Patents
1. 12277995 - Page buffer circuit and memory device including the same (2025-04-14),
2. 10169227 - Memory controller and memory system including the same (2019-01-01),
3. 9792206 - Memory controller and memory system including the same (2017-10-17),
4. 9424940 - Nonvolatile memory device and method of erasing the same (2016-08-23),
5. 9384803 - Storage device and latch management method thereof (2016-07-05),
6. 9183924 - Methods of operating nonvolatile memory devices that support efficient error detection (2015-11-10),
7. 9087608 - Method of programming non-volatile memory device and non-volatile memory device using the same (2015-07-21),
8. 9064581 - Method of programming non-volatile memory device and non-volatile memory device using the same (2015-06-23),
9. 9053822 - Methods of operating nonvolatile memory devices that support efficient error detection (2015-06-09),
10. 9007839 - Nonvolatile memory device performing read operation with variable read voltage (2015-04-14),
11. 8705273 - Negative voltage generator, decoder, nonvolatile memory device and memory system using negative voltage (2014-04-22),
12. 8630124 - Nonvolatile memory devices having memory cell arrays with unequal-sized memory cells and methods of operating same (2014-01-14),
13. 8559229 - Flash memory device and wordline voltage generating method thereof (2013-10-15),
14. 8508996 - Method of programming non-volatile memory device and non-volatile memory device using the same (2013-08-13),
15. 8488384 - Nonvolatile memory device, driving method thereof, and memory system having the same (2013-07-16),

Title: Innovator Spotlight: Moosung Kim and His Contributions to Memory Technology

Introduction: Moosung Kim, a pioneering inventor based in Yongin-si, South Korea, has made significant strides in the field of memory systems and controllers. With an impressive portfolio of 18 patents to his name, Kim's work is integral to advancing nonvolatile memory technologies, which play a crucial role in modern electronics.

Latest Patents: Among his latest innovations, Kim has developed a memory controller and memory system that includes an advanced operating method for controlling nonvolatile memory. This method involves managing a program depth bit map that indicates the upper page program state of multiple word lines in response to external write requests. Additionally, the system is designed to output various read commands based on the program depth bit map, facilitating efficient access to the desired word line during read operations.

Career Highlights: Moosung Kim is currently affiliated with Samsung Electronics Co., Ltd., where his expertise drives the company's cutting-edge developments in memory technology. His contributions have not only enhanced device performance but have also set new standards in the industry for reliability and efficiency.

Collaborations: Kim's innovative efforts are further bolstered by collaborations with accomplished colleagues such as Ohsuk Kwon and Jaewoo Im. Their combined expertise fosters a collaborative environment that stimulates creativity and leads to groundbreaking advancements in memory technologies.

Conclusion: With a robust portfolio and a commitment to innovation, Moosung Kim stands out as a remarkable inventor in the technology sector. His contributions to memory systems significantly influence both current and future electronic devices, ensuring enhanced performance and functionality in an ever-evolving digital landscape.

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