The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Sep. 27, 2011
Seung-gum Kim, Hwaseong-si, KR;
Ohsuk Kwon, Seoul, KR;
Dongku Kang, Yongin-si, KR;
Tae-young Kim, Seoul, KR;
Jaewoo Im, Hwaseong-si, KR;
Moosung Kim, Yongin-si, KR;
Jae-duk Yu, Seoul, KR;
Seung-Gum Kim, Hwaseong-si, KR;
Ohsuk Kwon, Seoul, KR;
Dongku Kang, Yongin-si, KR;
Tae-Young Kim, Seoul, KR;
Jaewoo Im, Hwaseong-si, KR;
Moosung Kim, Yongin-si, KR;
Jae-Duk Yu, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A word line voltage generating method of a flash memory which includes generating a program voltage using a positive voltage generator; generating a plurality of negative program verification voltages corresponding to a plurality of negative data states using a negative voltage generator; and generating at least one or more program verification voltages corresponding to at least one or more states using the positive voltage generator. Generating a plurality of negative program verification voltages includes generating a first negative verification voltage; discharging an output of the negative voltage generator to become higher than the first negative verification voltage; and performing a negative charge pumping operation until an output of the negative voltage generator reaches a second negative verification voltage level.