The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Jan. 04, 2016
Gyosoo Choo, Yongin-si, KR;
Dongku Kang, Seongnam-si, KR;
Sungwhan Seo, Hwaseong-si, KR;
Moosung Kim, Yongin-si, KR;
Gyosoo Choo, Yongin-si, KR;
Dongku Kang, Seongnam-si, KR;
Sungwhan Seo, Hwaseong-si, KR;
Moosung Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A nonvolatile memory device includes a substrate, a plurality of memory cells stacked in a direction perpendicular to the substrate, word lines connected to the memory cells, a ground select transistor between the memory cells and the substrate, a ground select transistor between the memory cells and the substrate, a ground select line connected to the ground select transistor, a bit line on the memory cells, and a string select transistor between the memory cells and the bit line. In an erase operation, the ground select line is floated at a time when a specific time passes after the erase voltage is provided to the substrate. And the ground select line is floated at different times depending on a temperature.