Mohamed S Moosa

USPTO Granted Patents = 14 (Patent Applications = 1)

Average Co-Inventor Count = 3.3

ph-index = 4

Forward Citations = 51(Granted Patents)

Location History:

Round Rock, TX (US) (2007 - 2015)
Austin, TX (US) (2016 - 2024)

Company Filing History:

11 out of 5,491

Freescale Semiconductor,inc.

Years Active: 2007-2024

Loading Chart...

14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12034000 - Double IO pad cell including electrostatic discharge protection scheme with reduced latch-up risk (2024-07-09),

2. 11862625 - Area-efficient ESD protection inside standard cells (2024-01-02),

3. 9553446 - Shared ESD circuitry (2017-01-24),

4. 9478529 - Electrostatic discharge protection system (2016-10-25),

5. 9076656 - Electrostatic discharge (ESD) clamp circuit with high effective holding voltage (2015-07-07),

6. 8330231 - Transistor having gate dielectric protection and structure (2012-12-11),

7. 8254186 - Circuit for verifying the write enable of a one time programmable memory (2012-08-28),

8. 7927989 - Method for forming a transistor having gate dielectric protection and structure (2011-04-19),

9. 7741183 - Method of forming a gate dielectric (2010-06-22),

10. 7612619 - Phase detector device and method thereof (2009-11-03),

11. 7439791 - Temperature compensation device and method thereof (2008-10-21),

12. 7279997 - Voltage controlled oscillator with a multiple gate transistor and method therefor (2007-10-09),

13. 7274247 - System, method and program product for well-bias set point adjustment (2007-09-25),

14. 7215268 - Signal converters with multiple gate devices (2007-05-08),

Title: Innovations of Inventor Mohamed S Moosa

Introduction

Mohamed S Moosa is a prominent inventor based in Round Rock, TX (US). He holds a total of 14 patents that showcase his contributions to the field of integrated circuits and electrostatic discharge protection.

Latest Patents

One of his latest patents is titled "Double IO pad cell including electrostatic discharge protection scheme with reduced latch-up risk." This invention features a double IO pad cell that includes a busing frame formed on a busing metal layer, aligned with a component frame integrated on an IC. The design incorporates first and second IO pads, a supply voltage rail, and a ground voltage rail, ensuring effective ESD protection. Another significant patent is "Area-efficient ESD protection inside standard cells," which describes an integrated circuit with a protected circuit that utilizes FinFET diodes to safeguard against electrostatic discharge voltage damage.

Career Highlights

Throughout his career, Mohamed has worked with notable companies such as Freescale Semiconductor, Inc. and NXP USA, Inc. His experience in these organizations has contributed to his expertise in developing innovative solutions in the semiconductor industry.

Collaborations

Mohamed has collaborated with talented individuals, including Michael A Stockinger and Sriram Kalpat. These partnerships have likely enhanced his work and led to further advancements in his field.

Conclusion

In summary, Mohamed S Moosa is an influential inventor whose work in electrostatic discharge protection and integrated circuits has made a significant impact. His numerous patents and collaborations reflect his dedication to innovation in technology.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com