The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Jan. 10, 2022
Nxp Usa, Inc., Austin, TX (US);
Michael A. Stockinger, Austin, TX (US);
Mohamed Suleman Moosa, Austin, TX (US);
Vasily Vladimirovich Korolev, Moscow, RU;
Irina Yuryevna Bashkirova, Moscow, RU;
Olga Olegovna Sibagatullina, Moscow, RU;
NXP USA, Inc., Austin, TX (US);
Abstract
An integrated circuit is provided with a protected circuit wherein a first FinFET operably coupled to a signal node is protected against electrostatic discharge voltage damage by a standard cell electrostatic discharge protection circuit which is connected between first and second voltage supplies and which includes a first FinFET diode connected between the signal node and the first voltage supply, and a second FinFET diode connected between the signal node and the second voltage supply, where the first and second FinFET diodes are each formed with a FinFET device comprising (1) a body well region forming a first diode terminal connected to one of the first or second voltage supplies, and (2) a shorted gate, source, and drain regions forming a second diode terminal connected to the signal node.