Osaka, Japan

Mitsuyasu Ohta

This inventor holds 19 USPTO granted patents, primarily in Semiconductor Testing. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 1994-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mitsuyasu Ohta. Retrieved from https://idiyas.com/inventor/mitsuyasu-ohta

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 57.9

Average Co-Inventor Count = 2.5

ph-index = 6

Forward Citations = 167(Granted Patents)


Location History:

  • Katano, JP (1996 - 2004)
  • Osaka, JP (1994 - 2008)

Company Filing History:


Years Active: 1994-2008

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Areas of Expertise:
Semiconductor Wiring Substrate
Integrated Circuit Device
Testing Method
Quality Evaluation
Test Sequence Generation
Design for Testability
Delay Faults
Inspection Method
Database for Design
Fault Detection
Functional Block
19 patents (USPTO):Explore Patents

Title: Mitsuyasu Ohta: Pioneering Inventor from Osaka

Introduction: Mitsuyasu Ohta is a renowned inventor hailing from Osaka, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Mitsuyasu Ohta holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Mitsuyasu Ohta has worked with leading tech companies in Japan, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Mitsuyasu Ohta has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge-sharing.

Conclusion: Mitsuyasu Ohta's passion for innovation and his relentless drive to push the boundaries of what is possible make him a true pioneer in the world of inventions, with his work continuing to inspire future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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