Mitsuru Ueno

Title: Mitsuru Ueno: Innovator in Thin-Film Transistor Technology

Introduction

Mitsuru Ueno is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on thin-film transistors.

Latest Patents

Ueno holds a patent for a thin-film transistor that incorporates an oxide semiconductor film. This invention includes a gate electrode, an active layer made of an oxide containing indium, zinc, and titanium, a gate insulating film, and source and drain electrodes connected to the active layer. The atomic proportions of the elements in the oxide are carefully defined, with indium ranging from 24 at. % to 80 at. %, zinc from 16 at. % to 70 at. %, and titanium from 0.1 at. % to 20 at. %. This patent showcases Ueno's expertise in developing advanced materials for electronic applications.

Career Highlights

Mitsuru Ueno is associated with Ulvac, Inc., a company known for its cutting-edge technology in vacuum equipment and materials. His work at Ulvac has positioned him as a key player in the semiconductor industry, contributing to advancements that enhance the performance and efficiency of electronic devices.

Collaborations

Ueno has collaborated with notable colleagues such as Junya Kiyota and Motoshi Kobayashi. These partnerships have fostered a creative environment that encourages innovation and the development of new technologies.

Conclusion

Mitsuru Ueno's contributions to thin-film transistor technology exemplify his commitment to innovation in the semiconductor field. His patent and work at Ulvac, Inc. highlight his role as a significant inventor in advancing electronic materials.