The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Nov. 22, 2016
Ulvac, Inc., Kanagawa, JP;
Mitsuru Ueno, Kanagawa, JP;
Junya Kiyota, Kanagawa, JP;
Motoshi Kobayashi, Kanagawa, JP;
Masaki Takei, Kanagawa, JP;
Kazutoshi Takahashi, Kanagawa, JP;
Koji Hidaka, Kanagawa, JP;
Yuu Kawagoe, Kanagawa, JP;
Kentarou Takesue, Kanagawa, JP;
Masaru Wada, Kanagawa, JP;
ULVAC, INC., Kanagawa, JP;
Abstract
A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.