Ulvac, Inc.

Mitsuru Ueno

Masaru Wada

Kazutoshi Takahashi

Junya Kiyota

Masaki Takei

Motoshi Kobayashi

Yuu Kawagoe

Kentarou Takesue

Koji Hidaka

A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.

Thin-film transistor, oxide semiconductor film, and sputtering target

Growing community of inventors

Kanagawa, Japan

Mitsuru Ueno