Minjoo Larry Lee

Title: Minjoo Larry Lee: Innovator in Semiconductor Technology

Introduction

Minjoo Larry Lee is a prominent inventor based in Cambridge, MA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is titled "Structure and method for a high-speed semiconductor device having a Ge channel layer." This invention provides a semiconductor structure that includes a strained Ge channel layer and a gate dielectric positioned over it. The design features a strained Ge channel MOSFET that utilizes a relaxed SiGe virtual substrate with a Ge content ranging from 50-95%. This innovation aims to improve performance compared to traditional bulk silicon devices. Another notable patent involves improvements in Complementary Metal Oxide Semiconductor (CMOS) devices, particularly field effect transistors (FETs). This patent introduces a unipolar CMOS (U-CMOS) transistor that enhances the efficiency of logic gates by utilizing the higher carrier mobility of electrons.

Career Highlights

Minjoo Larry Lee has worked with prestigious organizations, including the Massachusetts Institute of Technology and Amberwave Systems Corporation. His experience in these institutions has allowed him to develop groundbreaking technologies in the semiconductor industry.

Collaborations

Throughout his career, Minjoo has collaborated with notable individuals such as Eugene A. Fitzgerald and Christopher W. Leitz. These partnerships have contributed to the advancement of semiconductor research and development.

Conclusion

Minjoo Larry Lee's innovative work in semiconductor technology has led to significant advancements in the field. His patents reflect a commitment to improving device performance and efficiency, making him a key figure in the industry.