The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Jun. 16, 2004
Saurabh Gupta, Cambridge, MA (US);
Minjoo Larry Lee, Cambridge, MA (US);
Eugene A. Fitzgerald, Windham, NH (US);
Saurabh Gupta, Cambridge, MA (US);
Minjoo Larry Lee, Cambridge, MA (US);
Eugene A. Fitzgerald, Windham, NH (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A semiconductor-based structure includes a substrate layer, a compressively strained semiconductor layer adjacent to the substrate layer to provide a channel for a component, and a tensilely strained semiconductor layer disposed between the substrate layer and the compressively strained semiconductor layer. A method for making an electronic device includes providing, on a strain-inducing substrate, a first tensilely strained layer, forming a compressively strained layer on the first tensilely strained layer, and forming a second tensilely strained layer on the compressively strained layer. The first and second tensilely strained layers can be formed of silicon, and the compressively strained layer can be formed of silicon and germanium.