The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Nov. 06, 2008
Applicants:
Yu Bai, Cambridge, MA (US);
Minjoo L. Lee, Hamden, CT (US);
Eugene A. Fitzgerald, Windham, NH (US);
Inventors:
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor structure is provided. The semiconductor structure includes one or more III-IV material-based semiconductor layers. A tensile-strained Ge layer is formed on the one or more a III-IV material-based semiconductor layers. The tensile-strained Ge layer is produced through lattice-mismatched heteroepitaxy on the one or more a III-IV material-based semiconductor layers.