Ming Yang

Title: Innovations by Inventor Ming Yang

Introduction

Ming Yang is a prominent inventor based in Richardson, TX (US). He has made significant contributions to the field of technology, holding a total of 8 patents. His work primarily focuses on advancements in semiconductor manufacturing processes.

Latest Patents

One of his latest patents is titled "Process for forming a dual damascene structure." This invention describes a method for creating a dual damascene structure, which involves forming an etch stop layer on a dielectric layer. A second dielectric layer is then formed on the etch stop layer, followed by the application of an ARC layer on the second dielectric layer. The process culminates in the simultaneous formation of a first trench and a second trench in the respective dielectric layers.

Another notable patent is "Endpoint control for small open area by RF source parameter Vdc." This method detects the endpoint of a plasma etching system by measuring the DC voltage drop across both the sheath and the film being etched. As the film nears removal, a voltage drop indicates thinning, allowing for endpoint detection before optical emission techniques are employed. The voltage drop is measured across resistors within the matching network.

Career Highlights

Ming Yang is currently employed at Texas Instruments Corporation, where he continues to innovate and contribute to the field of semiconductor technology. His expertise and inventions have played a crucial role in enhancing manufacturing processes.

Collaborations

Ming has collaborated with several talented individuals, including Takayuki Niuya and Abbas Ali. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Ming Yang's contributions to the field of technology through his patents and collaborations highlight his role as a significant inventor. His work continues to influence advancements in semiconductor manufacturing processes.