The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2006
Filed:
Jun. 27, 2003
Applicants:
Abbas Ali, Plano, TX (US);
Ming Yang, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention describes a method for forming a dual damascene structure. An etch stop layer () is formed on a dielectric layer (). A second dielectric layer () is formed on the etch stop layer () and an ARC layer () is formed the second dielectric layer. A first trench () and a second trench () are then simultaneously formed in the first and second dielectric layers () and () respectively.