The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 1999
Filed:
Apr. 25, 1997
Applicant:
Inventors:
Ming Yang, Richardson, TX (US);
Takayuki Niuya, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438724 ; 438692 ; 438696 ; 438733 ; 438744 ; 252 791 ; 257752 ; 257758 ;
Abstract
An integrated circuit includes a conductive structure (66) is formed with a top layer of silicon nitride (62) and silicon nitride (70) sidewalls on a semiconductor substrate. The layer of silicon nitride (70) covering the sidewalls of the conductive structure (66) intersect with the layer of silicon nitride on top of the conductive structure with a relatively square shoulder. A subsequently deposited conductor makes contact with the surface of the semiconductor substrate (56) without shorting to the conductive structure (66) on the semiconductor substrate.