Hsinchu, Taiwan

Ming-Yang Li

USPTO Granted Patents = 11 

Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2021-2025

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11 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Ming-Yang Li

Introduction

Ming-Yang Li is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on advancing the manufacturing processes and structures of semiconductor devices.

Latest Patents

Among his latest patents, one notable invention is a semiconductor device and method of manufacturing a semiconductor device. This method involves applying plasma to a portion of a metal dichalcogenide film, which includes a first metal and a chalcogen selected from sulfur, selenium, tellurium, and their combinations. Another significant patent details a process for fabricating a finFET device that utilizes a semiconductor layer of a two-dimensional (2D) semiconductor material. This layer is a thin film formed over a dielectric fin-shaped structure, extending over multiple surfaces to enhance device performance.

Career Highlights

Ming-Yang Li is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in the development of advanced semiconductor technologies.

Collaborations

He has collaborated with notable colleagues, including Lain-Jong Li and Chao-Ching Cheng, contributing to various projects that push the boundaries of semiconductor research and development.

Conclusion

Ming-Yang Li's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to shape the future of semiconductor manufacturing and innovation.

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