The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
May. 17, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 21/02639 (2013.01); H01L 21/823412 (2013.01); H01L 29/1033 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/778 (2013.01); H01L 29/78681 (2013.01);
Abstract
In a method of forming a two-dimensional material layer, a nucleation pattern is formed over a substrate, and a transition metal dichalcogenide (TMD) layer is formed such that the TMD layer laterally grows from the nucleation pattern. In one or more of the foregoing and following embodiments, the TMD layer is single crystalline.
Li, Ming-Yang. (2021). Field effect transistor using transition metal dichalcogenide and a method for forming the same (U.S. Patent No. 11037783). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11037783
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile