Location History:
- Tainan, TW (2004)
- Hsin-Chu, TW (2018)
Company Filing History:
Years Active: 2004-2018
Title: The Innovations of Ming-Hsing Li
Introduction
Ming-Hsing Li is a notable inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of ion implantation technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and effectiveness of ion implanters, which are crucial in semiconductor manufacturing.
Latest Patents
Ming-Hsing Li's latest patents include innovative technologies that improve ion implantation processes. One of his patents is for a plasma generation system for ion implanters. This invention features a dissociation chamber that receives gas and outputs ions, surrounded by a vacuum chamber. The design incorporates magnetic materials and a microwave source to achieve electron cyclotron resonance, effectively ionizing the gas. Another significant patent involves devices for controlling electron emission in plasma flood systems. This device includes a mechanical shutter that can vary the bore size to control electron emission from an arc chamber into an ion beam, enhancing the precision of ion implantation.
Career Highlights
Ming-Hsing Li is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this prestigious company allows him to apply his innovative ideas in a practical setting, contributing to advancements in semiconductor technology.
Collaborations
Ming-Hsing Li collaborates with talented coworkers such as Tsung-Min Lin and Fang-Chi Chien. Their combined expertise fosters a creative environment that drives innovation in their projects.
Conclusion
Ming-Hsing Li's contributions to ion implantation technology through his patents and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as a key innovator in the semiconductor industry. His inventions are paving the way for advancements in this critical field.