The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Sep. 03, 2002
Ming-Hsing Li, Tainan, TW;
Min-Tsung Lee, Pintung, TW;
Keneth Lin, Kaosiung, TW;
Yow-Te Tsai, Kaohsiung, TW;
Huang-Ta Huang, Itan, TW;
Chao-Chun Chen, Tainan, TW;
Huei-Mei Jao, Junghe, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A device for controlling emission of electrons from an arc chamber of a plasma flood system into an ion beam in an ion implanter for implanting ions into a substrate. In one embodiment, the invention comprises a mechanical shutter disposed in a discharge opening between the arc chamber and the plasma guide tube of the implanter. The bore size of the shutter can be selectively varied in order to control the emission of electrons from the arc chamber into the ion beam in the plasma guide tube. In another embodiment, the invention comprises an electron-attracting probe which is disposed in the discharge opening.