The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Mar. 31, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Tsung-Min Lin, Zhubei, TW;
Ming-Hsing Li, Hsin-Chu, TW;
Fang-Chi Chien, Hsinchu, TW;
Chao-Li Shih, Jhudong Township, TW;
Hong-Hsing Chou, Jhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.