Zhubei, Taiwan

Tsung-Min Lin

USPTO Granted Patents = 11 

Average Co-Inventor Count = 4.2

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Hsinchu, TW (2023)
  • Zhubei, TW (2017 - 2024)

Company Filing History:


Years Active: 2017-2025

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11 patents (USPTO):

Title: Tsung-Min Lin: Innovator in Ion Implantation Technology

Introduction

Tsung-Min Lin is a prominent inventor based in Zhubei, Taiwan. He has made significant contributions to the field of ion implantation technology, holding a total of 11 patents. His work focuses on enhancing the efficiency and precision of ion implanters, which are crucial in semiconductor manufacturing.

Latest Patents

Among his latest patents is the "Repellent Electrode for Electron Repelling." This invention is directed towards a repellent electrode used in the source arc chamber of an ion implanter. The design includes a shaft and a repellent body with a surface shape that fits the inner chamber space, minimizing the gap between the repellent body and the inner sidewall to prevent shorts. Another notable patent is the "Calibration Hardware for Ion Implanter." This invention features a horizontally oriented calibration jig for a wafer gripper arm, designed to ensure precise adjustments during the calibration process.

Career Highlights

Tsung-Min Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has played a vital role in advancing ion implantation techniques, which are essential for producing high-performance semiconductor devices.

Collaborations

He has collaborated with notable colleagues such as Tai-Kun Kao and Jen-Chung Chiu, contributing to various projects that enhance the capabilities of ion implanters.

Conclusion

Tsung-Min Lin's contributions to ion implantation technology through his patents and collaborations have significantly impacted the semiconductor industry. His innovative spirit continues to drive advancements in this critical field.

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