The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Aug. 31, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tai-Kun Kao, Hsinchu, TW;
Tsung-Min Lin, Zhubei, TW;
Jen-Chung Chiu, Hsinchu, TW;
Ren-Dou Lee, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/08 (2006.01); H01J 37/317 (2006.01); C01F 17/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/08 (2013.01); H01J 37/3171 (2013.01); C01F 17/00 (2013.01);
Abstract
Ion generators for ion implanters are provided. The ion generator for an ion implanter includes an ion source arc chamber including an arc chamber housing and a thermal electron emitter coupled to the arc chamber housing. In addition, the thermal electron emitter includes a filament and a cathode, and the cathode has a solid top portion made of a work function modified conductive material including tungsten (W) and a work function modification metal.