Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming-Hsing Li

Hong-Hsing Chou

Tsung-Min Lin

Fang-Chi Chien

Chao-Li Shih

Chao-Chun Chen

Huang-Ta Huang

Huei-Mei Jao

Keneth Lin

Yow-Te Tsai

Min-Tsung Lee

An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.

Plasma generation for ion implanter

A device for controlling emission of electrons from an arc chamber of a plasma flood system into an ion beam in an ion implanter for implanting ions into a substrate. In one embodiment, the invention comprises a mechanical shutter disposed in a discharge opening between the arc chamber and the plasma guide tube of the implanter. The bore size of the shutter can be selectively varied in order to control the emission of electrons from the arc chamber into the ion beam in the plasma guide tube. In another embodiment, the invention comprises an electron-attracting probe which is disposed in the discharge opening.

Devices for controlling electron emission in plasma flood system

Growing community of inventors

Hsin-Chu, Taiwan

Ming-Hsing Li