Taichung, Taiwan

Ming-Hsien Yang

Average Co-Inventor Count = 6.5

ph-index = 3

Forward Citations = 11(Granted Patents)

Forward Citations (Not Self Cited) = 3(Sep 21, 2024)


Years Active: 2018-2025

where 'Filed Patents' based on already Granted Patents

8 patents (USPTO):

Title: Ming-Hsien Yang: A Visionary in the World of Inventors

Introduction:

Ming-Hsien Yang, a distinguished inventor based in Taichung, TW, has carved a path of innovation and excellence in the realm of technological advancements. His passion for innovation and relentless pursuit of excellence have made him a prominent figure in the world of inventors.

Latest Patents:

Ming-Hsien Yang's latest patents include:

1. Composite BSI structure and method of manufacturing the same: This innovation features composite backside illuminated structures in image sensors to enhance performance by utilizing trench isolation structures and absorption enhancements.

2. Semiconductor device structure and method for forming the same: This patent introduces a semiconductor device structure with interconnect layers and a conductive bonding structure for enhanced functionality.

Career Highlights:

With an impressive portfolio of 6 patents, Ming-Hsien Yang has demonstrated a keen understanding of cutting-edge technologies and a knack for pushing the boundaries of conventional solutions. His contributions have significantly impacted the field of semiconductor devices and image sensors.

Collaborations:

Ming-Hsien Yang's work at Taiwan Semiconductor Manufacturing Company Ltd. has been enriched by collaborations with esteemed coworkers such as Dun-Nian Yaung and Feng-Chi Hung. Together, they have fueled innovation and brought revolutionary ideas to fruition.

Conclusion:

In conclusion, Ming-Hsien Yang's influence as an inventor reflects a legacy of innovation and determination. His remarkable achievements continue to inspire future generations of inventors to dream big and redefine the possibilities within the technological landscape.

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