The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Jan. 26, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ming-Hsien Yang, Taichung, TW;
Ching-Chun Wang, Tainan, TW;
Dun-Nian Yaung, Taipei, TW;
Feng-Chi Hung, Chu-Bei, TW;
Sin-Yao Huang, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a first surface, a second surface opposing the first surface, and sidewalls defining a recess that passes through the semiconductor substrate. A first interconnect layer is within a first dielectric structure disposed along the second surface, and a bonding pad is in the recess and extends to the first interconnect layer. A dielectric filling layer is also within the recess. The dielectric filling layer has an opening over a portion of the bonding pad and a curved upper surface over the bonding pad. A nickel layer is over the bonding pad and in the opening.