The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Sep. 18, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Ming-Hsien Yang, Taichung, TW;

Ching-Chun Wang, Tainan, TW;

Dun-Nian Yaung, Taipei, TW;

Feng-Chi Hung, Chu-Bei, TW;

Sin-Yao Huang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/48 (2006.01); H01L 27/146 (2006.01); H01L 23/522 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53209 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/43 (2013.01); H01L 24/46 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 27/14634 (2013.01); H01L 24/48 (2013.01); H01L 24/80 (2013.01); H01L 24/83 (2013.01); H01L 24/85 (2013.01); H01L 2224/02126 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05096 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08121 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48229 (2013.01); H01L 2224/73251 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/9202 (2013.01); H01L 2224/9212 (2013.01); H01L 2224/9222 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01079 (2013.01);
Abstract

A semiconductor device structure is provided, in some embodiments. The semiconductor device structure includes a semiconductor substrate having a first surface, a second surface, and sidewalls defining a recess that passes through the semiconductor substrate. The semiconductor device structure further includes an interconnect structure having one or more interconnect layers within a first dielectric structure that is disposed along the second surface. A conductive bonding structure is disposed within the recess and includes nickel. The conductive bonding structure has opposing outermost sidewalls that contact sidewalls of the interconnect structure.


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