The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jan. 28, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Ming-Hsien Yang, Taichung, TW;
Wen-I Hsu, Tainan, TW;
Kuan-Fu Lu, Kaohsiung, TW;
Feng-Chi Hung, Hsin-Chu County, TW;
Jen-Cheng Liu, Hsin-Chu, TW;
Dun-Nian Yaung, Taipei, TW;
Chun-Hao Chou, Tainan, TW;
Kuo-Cheng Lee, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor image sensing structure includes a substrate having a first region and a second region, a metal grid in the first region, and a hybrid metal shield in the second region. The hybrid metal shield includes a first metallization layer, a second metallization layer disposed over the first metallization layer, a third metallization layer disposed over the second metallization layer, and a fourth metallization layer disposed over the third metallization layer. An included angle of the second metallization layer is between approximately 40° and approximately 60°.