This inventor holds 3 USPTO granted patents and 3 published patent applications. Top assignee: United Microelectronics Corp.. Active years: 2012-2014.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2012-2014
Title: Ming-Da Hsieh: Innovator in Semiconductor Fabrication
Introduction
Ming-Da Hsieh is an inventor based in Kaohsiung City, Taiwan. He is known for his contributions to semiconductor fabrication techniques. Although he currently holds no granted patents, his work in the field is noteworthy.
Latest Patent Applications
Ming-Da Hsieh has submitted several patent applications that showcase his innovative methods. One of his latest applications is titled "METHOD FOR FORMING DAMASCENE TRENCH STRUCTURE AND APPLICATIONS THEREOF." This method involves fabricating a damascene trench structure by providing a semiconductor structure with an inner layer dielectric and a patterned hard mask. The process includes etching the patterned hard mask in an atmosphere primarily consisting of nitrogen and carbon-fluoride compositions.
Another significant application is "METHOD TO CONTROL CRITICAL DIMENSION." This method aims to control critical dimensions in semiconductor fabrication. It begins with a material layer and a composite patterned layer covering it. The composite patterned layer defines a first critical dimension, and an etching gas is used to etch the composite layer, resulting in a transferred pattern with a second critical dimension that is substantially smaller than the first.
Conclusion
Ming-Da Hsieh's innovative approaches in semiconductor fabrication highlight his potential impact on the industry. His latest patent applications reflect his commitment to advancing technology in this field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile