The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Jun. 16, 2011
Chang-hsiao Lee, Shanhua Township, Tainan County, TW;
Shih-fang Tzou, Jhudong Township, Hsinchu County, TW;
Ming-da Hsieh, Kaohsiung, TW;
Yu-tsung Lai, Fongyuan, TW;
Jyh-cherng Yau, Tainan, TW;
Jiunn-hsiung Liao, Shanhua Township, Tainan County, TW;
Chang-Hsiao Lee, Shanhua Township, Tainan County, TW;
Shih-Fang Tzou, Jhudong Township, Hsinchu County, TW;
Ming-Da Hsieh, Kaohsiung, TW;
Yu-Tsung Lai, Fongyuan, TW;
Jyh-Cherng Yau, Tainan, TW;
Jiunn-Hsiung Liao, Shanhua Township, Tainan County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor process is provided. First, a metal layer, a dielectric layer and a patterned hard mask layer are sequentially formed on a substrate. Thereafter, a portion of the dielectric layer is removed to form an opening exposing the metal layer. Afterwards, a cleaning solution is used to clean the opening. The cleaning solution includes a triazole compound with a content of 0.00275 to 3 wt %, sulfuric acid with a content of 1 to 10 wt %, hydrofluoric acid with a content of 1 to 200 ppm and water. The semiconductor process can reduce the possibility of having an incomplete turning on, a leakage or a short, so that the yield of the product is increased.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile