The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Nov. 16, 2010
Ming-da Hsieh, Kaohsiung, TW;
Yu-tsung Lai, Taichung County, TW;
Jiunn-hsiung Liao, Tainan County, TW;
Ming-Da Hsieh, Kaohsiung, TW;
Yu-Tsung Lai, Taichung County, TW;
Jiunn-Hsiung Liao, Tainan County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A patterning method and a method for fabricating a dual damascene opening are described, wherein the patterning method includes following steps. An organic layer, a silicon-containing mask layer and a patterned photoresist layer are formed on a material layer in sequence. The silicon-containing mask layer is removed using the patterned photoresist layer as a mask. A reactive gas is used for conducting an etching step so as to remove the organic layer with the silicon-containing mask layer as a mask, wherein the reactive gas contains no oxygen species. The material layer is removed using the organic layer as a mask, so that an opening is formed in the material layer. The organic layer is then removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile