Mountain View, CA, United States of America

Mihir Tendulkar

USPTO Granted Patents = 21 (Patent Applications = 5)

Average Co-Inventor Count = 2.3

ph-index = 6

Forward Citations = 77(Granted Patents)

Company Filing History:

Kabushiki Kaisha Toshiba

where one patent can have more than one assignee

Years Active: 2013-2016

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21 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9299926 - Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element (2016-03-29),

2. 9276210 - Conductive barriers for ternary nitride thin-film resistors (2016-03-01),

3. 9243321 - Ternary metal nitride formation by annealing constituent layers (2016-01-26),

4. 9231203 - Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells (2016-01-05),

5. 9178142 - Doped electrodes used to inhibit oxygen loss in ReRAM device (2015-11-03),

6. 9030018 - Test vehicles for evaluating resistance of thin layers (2015-05-12),

7. 9006696 - Metal aluminum nitride embedded resistors for resistive random memory access cells (2015-04-14),

8. 8981329 - Method of forming anneal-resistant embedded resistor for non-volatile memory application (2015-03-17),

9. 8969129 - [object Object] (2015-03-03),

10. 8921154 - Method of forming anneal-resistant embedded resistor for non-volatile memory application (2014-12-30),

11. 8901530 - Nonvolatile memory device using a tunnel oxide as a passive current steering element (2014-12-02),

12. 8895949 - Nonvolatile memory device using a varistor as a current limiter element (2014-11-25),

13. 8860002 - Limited maximum fields of electrode-switching layer interfaces in Re-RAM cells (2014-10-14),

14. 8853661 - Metal aluminum nitride embedded resistors for resistive random memory access cells (2014-10-07),

15. 8847187 - Method of forming anneal-resistant embedded resistor for non-volatile memory application (2014-09-30),

Title: Innovations of Mihir Tendulkar: Pioneering Nonvolatile Memory Devices

Introduction

Mihir Tendulkar is an impactful inventor based in Mountain View, California, with a significant contribution to the field of nonvolatile memory technology. With a portfolio comprising 21 patents, his innovations exhibit a commitment to enhancing the performance and lifetime of memory devices.

Latest Patents

One of Mihir's noteworthy patents is a nonvolatile memory device utilizing a tunnel oxide layer and an oxygen blocking layer as a current limiter element. This invention includes a method for forming a resistive switching memory element, emphasizing improved switching performance and longevity via a current limiting component. The design integrates a resistive material that enhances the functionality of the resistive switching memory element, thereby optimizing the current flow during programming steps. Another remarkable invention is focused on conductive barriers for ternary nitride thin-film resistors. Specifically, it involves a thin metallic barrier layer that protects the underlying ternary metal nitride layer from oxidation while maintaining the device's resistance characteristics.

Career Highlights

Mihir Tendulkar has amassed a wealth of experience working for notable companies in the technology sector. He has held positions at Intermolecular, Inc. and the renowned International Business Machines Corporation. His career is marked by a dedication to developing advanced memory devices, making a considerable impact in the semiconductor industry.

Collaborations

Mihir's journey also showcases fruitful collaborations with talented professionals in the field. He has worked alongside esteemed individuals such as Yun Yu Wang and Imran Hashim, contributing to the development of groundbreaking technologies in nonvolatile memory solutions.

Conclusion

In conclusion, Mihir Tendulkar stands out as a prominent inventor whose contributions are vital to the advancement of nonvolatile memory technologies. Through his innovative patents and collaborations with industry colleagues, he consistently pushes the boundaries of what is possible in the realm of memory devices, heralding a new era of efficiency and performance.

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