Hachioji, Japan

Michimasa Funabashi


Average Co-Inventor Count = 2.6

ph-index = 6

Forward Citations = 98(Granted Patents)


Location History:

  • Tachikawa, JP (1993 - 1999)
  • Fuchu, JP (1996 - 2000)
  • Hachioji, JP (2001 - 2004)

Company Filing History:


Years Active: 1993-2004

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10 patents (USPTO):Explore Patents

Title: Michimasa Funabashi: Innovator in Semiconductor Technology

Introduction

Michimasa Funabashi is a prominent inventor based in Hachioji, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work has been instrumental in advancing the manufacturing processes of semiconductor integrated circuit devices.

Latest Patents

Among his latest patents, Funabashi has developed a method of manufacturing a semiconductor integrated circuit device. This method involves using a processing solution that contains hydrogen peroxide, hydracid fluoride salt, and water for pre-cleaning prior to forming a gate oxide film. The silicon wafer is subjected to heat treatment, and tetraalkyl ammonium fluoride or ammonium fluoride is utilized as the hydracid fluoride salt.

Career Highlights

Funabashi has had a distinguished career, working with notable companies such as Hitachi, Ltd. and Renesas Technology Corporation. His expertise in semiconductor technology has allowed him to play a crucial role in various projects and innovations within these organizations.

Collaborations

Throughout his career, Funabashi has collaborated with esteemed colleagues, including Jun Murata and Yoshitaka Tadaki. These collaborations have further enriched his contributions to the field of semiconductor technology.

Conclusion

In summary, Michimasa Funabashi is a key figure in the semiconductor industry, known for his innovative patents and significant career achievements. His work continues to influence the development of advanced semiconductor technologies.

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