Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Tokyo Electronics Co., Ltd.

Hiatchi, Ltd.

Michimasa Funabashi

Hiroyuki Uchiyama

Yutaka Kobayashi

Yoshitaka Tadaki

Masayuki Kojima

Hisashi Nakamura

Toshihiro Sekiguchi

Kazuo Nojiri

Atsuyoshi Koike

Jun Murata

Hiromichi Enami

Osamu Kasahara

Hiroyuki Miyazawa

Atsushi Ogishima

Hiroko Kaneko

Toshio Maeda

Masaki Nagao

Yasuo Kiguchi

Kazuya Kadota

Tadashi Chikahara

Masato Sadaoka

Shuji Ikeda

Hideo Miura

Norio Suzuki

Norio Ishitsuka

Yasuko Yoshida

Katsuhiko Itoh

Yasuhiro Mitsui

Takashi Irie

Haruo Itoh

Akio Saito

Katsuhiro Ota

Keiji Hasumi

Kazuo Nakano

Takeshi Tajima

Kazuaki Mizokami

Sadao Matsuoka

A processing solution containing hydrogen peroxide, hydracid fluoride salt, and water is used for pre-cleaning prior to a step of forming a gate oxide film by subjecting a silicon wafer to a heat treatment. Tetraalkyl ammonium fluoride, ammonium fluoride or the like is used as hydracid fluoride salt.

Method of manufacturing a semiconductor integrated circuit device

A processing solution containing hydrogen peroxide, hydracid fluoride salt, and water is used for pre-cleaning prior to a step of forming a gate oxide film by subjecting a silicon water to a heat treatment. Tetraalkyl ammonium fluoride, ammonium fluoride or the like is used as hydracid fluoride salt.

A method for manufacturing a semiconductor device includes the steps of (1) forming a pad oxide film of 5 nm or more on a circuit forming surface of a semiconductor substrate; (2) forming an oxidation inhibition film on the pad oxide film; (3) forming grooves of a given depth with the oxidation inhibition film as a mask; (4) receding the pad oxide film; (5) oxidizing the grooves formed on the semiconductor substrate in the range of 0<C&lE;0.88,-924 in which the oxidizing atmosphere is dry oxidation (H2/O2&ap;0), the oxygen partial pressure in the air corresponding to the oxygen partial pressure ratio is C %, and the oxidizing temperature is t (&deg; C.); (6) burying an insulating film inside of the oxidized groove; (7) removing the buried insulating film formed on the oxidation inhibition film; (8) removing the oxidation inhibition film formed on a circuit forming surface of the semiconductor substrate; and (9) removing the pad oxide film formed on the circuit forming surface of said semiconductor substrate.

Semiconductor device

A method for manufacturing a semiconductor device includes the steps of (1) forming a pad oxide film of 5 nm or more on a circuit forming surface of a semiconductor substrate; (2) forming an oxidation inhibition film on the pad oxide film; (3) forming grooves of a given depth with the oxidation inhibition film as a mask; (4) receding the pad oxide film; (5) oxidizing the grooves formed on the semiconductor substrate in the range of 0<C&lE;0.88t&minus;924 in which the oxidizing atmosphere is dry oxidation (H2/O2&ap;0), the oxygen partial pressure in the air corresponding to the oxygen partial pressure ratio is C %, and the oxidizing temperature is t (&deg; C.); (6) burying an insulating film inside of the oxidized groove; (7) removing the buried insulating film formed on the oxidation inhibition film; (8) removing the oxidation inhibition film formed on a circuit forming surface of the semiconductor substrate; and (9) removing the pad oxide film formed on the circuit forming surface of said semiconductor substrate.

Method of forming a shallow groove isolation structure

A processing solution containing hydrogen peroxide, hydracid fluoride salt, and water is used for pre-cleaning prior to a step of forming a gate oxide film,by subjecting a silicon wafer,to a heat treatment. Tetraalkyl ammonium fluoride, ammonium fluoride or the like is used as hydracid fluoride salt.

By employing a cleaning method wherein a substrate such as Si wafer is covered with a film having electrostatic repulsive force or a substance capable of controlling a zeta potential so as to prevent or remarkably reduce adhesion of fine particles present in a cleaning solution or etching solution, electronic parts can be produced in higher yield and lower cost.

Semiconductor cleaning and production methods using a film repulsing

A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.

Semiconductor integrated circuit, method of fabricating the same and

An atmospheric pressure, elevated temperature gas desorption apparatus which enables quanitiative analysis of impurities absorbed in or on the surface of a solid sample (semiconductor wafer, optical disc, etc.) is disclosed. The atmospheric pressure, elevated temperature gas desorption apparatus for desorbing impurities absorbed in or on the surface of a plate-like solid sample 18 into a carrier gas 19 in a chamber 6 under an atmospheric pressure while increasing the temperature of the solid sample 18 includes a desorption room 7A provided in the chamber 6 and connected through to a first gas supply system 1 for supplying the carrier gas 19, for desorbing impurities absorbed in or on the surface of the solid sample 18 into the carrier gas 19. A sample support room 7B is provided in the chamber 6 and is separated from the desorption room 7A by a partition member 6A. The solid sample 18 is in close contact with the partition member 6A. A heater 8 for heating the solid sample 18 is in close contact with the partition member 6A. A reserve room 9 is connected to the sample support room 7B and to a second gas supply system 13 for supplying a purge gas.

Atmospheric pressure, elevated temperature gas desorption apparatus

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Hachioji, Japan

Michimasa Funabashi