Ottobrunn, Germany

Michael Stoisiek

This inventor holds 15 USPTO granted patents and 2 published patent applications and 2 EPO patents, primarily in Power Semiconductors. Top assignees: Siemens Aktiengesellschaft, X-Fab Semiconductor Foundries Ag, Infineon Technologies Ag. Active years: 1985-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Michael Stoisiek. Retrieved from https://idiyas.com/inventor/michael-stoisiek

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15 

% Patents Active = 100.0

 

Average Co-Inventor Count = 1.7

ph-index = 8

Forward Citations = 329(Granted Patents)


Location History:

  • München, DE (2001)
  • Ottobrunn, DE (1985 - 2002)
  • Erlangen, DE (2003 - 2014)

Company Filing History:


Years Active: 1985-2014

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Areas of Expertise:
Power Component
Thyristor
High-Voltage Transistors
Integrated Circuits
PN Junction
Lateral IGBT
RESURF Structure
Current Switching
Edge Termination
Electronic Device
Substrate
15 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Michael Stoisiek

Introduction: Michael Stoisiek, an accomplished inventor based in Ottobrunn, Germany, has made significant contributions to the field of power semiconductor technology. With a remarkable portfolio of 12 patents, his work focuses on improving the efficiency and performance of semiconductor components, particularly in high-voltage smart power integrated circuits.

Latest Patents: Michael's latest patents include groundbreaking advancements in semiconductor components. One of his notable innovations addresses the challenge that high-voltage smart power ICs often occupy extensive chip surface area. By leveraging the superior electrical properties of silicon carbide, Stoisiek's designs significantly reduce material consumption and optimize the size of drift zones within semiconductor components. His SiC MOS transistor, featuring a unique structure with a thin SiC layer, demonstrates how performance can be enhanced while minimizing spatial requirements. Additionally, his work on high-voltage modules involves a metallic-ceramic substrate with a specially designed high-impedance layer that ensures an even electrical potential distribution, showcasing his commitment to advancing semiconductor technology.

Career Highlights: Throughout his career, Stoisiek has established himself as a leader in the semiconductor industry while working for Siemens Aktiengesellschaft. His innovative spirit has led to solutions that not only reduce costs but also enhance the overall performance of electronic devices. His 12 patents reflect his dedication to enhancing the semiconductor landscape.

Collaborations: In his pursuit of innovation, Michael Stoisiek has collaborated with esteemed colleagues, including Heinz Mitlehner and Klaus-Guenter Oppermann. These partnerships highlight the spirit of teamwork that drives technological advancements in the semiconductor sector and showcases their collective commitment to pushing the boundaries of engineering.

Conclusion: Michael Stoisiek stands as a prominent figure in the field of power semiconductors, with a focus on optimizing performance and efficiency. His contributions, particularly in developing advanced semiconductor components and substrates, have paved the way for further innovations in the industry. With a robust patent portfolio and collaborative efforts, Stoisiek continues to inspire future advancements in the world of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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