Tewksbury, MA, United States of America

Michael J Manfra


Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 45(Granted Patents)


Company Filing History:


Years Active: 1982-1995

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3 patents (USPTO):Explore Patents

Title: Michael J Manfra: Innovator in III-V Semiconductor Technology

Introduction

Michael J Manfra is a prominent inventor based in Tewksbury, MA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of III-V based integrated circuits. With a total of 3 patents to his name, Manfra's work has had a lasting impact on the industry.

Latest Patents

One of his latest patents is focused on III-V based integrated circuits having low temperature growth buffer. This invention describes a new III-V buffer or passivation material produced by low temperature growth (LTG) of III-V compounds. The material exhibits unique and desirable properties, especially for closely spaced, submicron gate length active III-V semiconductor FET devices, such as HEMTs, MESFETs, and MISFETs. The LTG material is grown under ambient conditions, incorporating an excess of the more volatile III-V species into the grown material. This new material is crystalline, highly resistive, relatively insensitive to light, and can be overgrown with high-quality III-V active layers or used as a passivation material to insulate and protect active device structures.

Another significant patent involves the method of making buffer layers for III-V devices using solid phase. This invention describes a new III-V buffer material produced by low temperature growth of III-V compounds by MBE. It has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300 degrees Celsius. The new material is crystalline, highly resistive, optically inactive, and can be overgrown with high-quality III-V active layers.

Career Highlights

Throughout his career, Michael J Manfra has worked with prestigious institutions, including the Massachusetts Institute of Technology. His innovative work has positioned him as a key figure in the semiconductor research community.

Collaborations

Manfra has collaborated with notable individuals in the field, including Arthur R Calawa and Frank W Smith. Their combined expertise has contributed to advancements in semiconductor technology.

Conclusion

Michael J Manfra's contributions to III

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