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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4952527 B1

PDFFull Text
Date of Patent:
Aug. 28, 1990

Filed:

Feb. 19, 1988

Method of making buffer layers for iii-v devices using solid phase

Applicant:
Inventors:

Arthur R Calawa, Wellesley, MA (US);

Frank W Smith, Cambridge, MA (US);

Michael J Manfra, Tewksbury, MA (US);

Chang-Lee Chen, Sudbury, MA (US);

Assignee:

Massachusetts Institute of Technology, Cambridge, MA (US);

Attorney:

Hamilton, Brook, Smith & Reynolds

Primary Examiner:

Brian E Hearn

Assistant Examiner:

William Bunch

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437107 ; 148D / ; 148D / ; 148D / ; 148D / ; 148D / ; 156612 ; 437 82 ; 437108 ; 437132 ; 437247 ; 437912 ; 437111 ; 437939 ; 437973 ;
Abstract

A new III-IV buffer material is described which is produced by low temperature growth of III-V compounds by MBE that has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices, such as HEMT's, MESFET's and MISFET's. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300.degree. C. The new material is crystalline, highly resistive, optically inactive, and can be overgrown with high quality III-V active layers.

Find Patent Forward Citations

Calawa, Arthur. (1990). Method of making buffer layers for iii-v devices using solid phase (U.S. Patent No. 4952527). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4952527

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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