This inventor holds 5 USPTO granted patents. Top assignees: Massachusetts Institute of Technology, Other. Active years: 1982-1995.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Chelmsford, MA (US) (1982)
- Wellesley, MA (US) (1990 - 1995)
Company Filing History:

Years Active: 1982-1995
Title: Arthur R. Calawa: Innovator in III-V Semiconductor Technology
Introduction
Arthur R. Calawa is a prominent inventor based in Wellesley, MA (US), known for his significant contributions to the field of III-V semiconductor technology. He holds a total of 5 patents, showcasing his innovative approach to integrated circuits and photoconductive devices.
Latest Patents
Calawa's latest patents include advancements in III-V based integrated circuits featuring low temperature growth buffers. One notable patent describes a new III-V buffer or passivation material produced by low temperature growth (LTG) of III-V compounds. This material exhibits unique properties that are particularly beneficial for closely spaced, submicron gate length active III-V semiconductor FET devices, such as HEMTs, MESFETs, and MISFETs. The LTG material is grown under ambient conditions, incorporating an excess of the more volatile III-V species, resulting in a crystalline, highly resistive material that is relatively insensitive to light. This material can be overgrown with high-quality III-V active layers or used as a passivation material to insulate and protect active device structures. Another patent focuses on ultra-high-speed photoconductive devices utilizing semi-insulating layers. This device comprises a homoepitaxial semi-insulating III-V layer, produced by low temperature growth of III-V compounds through molecular beam epitaxy (MBE). In a GaAs embodiment, the layer is grown under arsenic stable growth conditions at substrate temperatures ranging from 150°C to about 300°C.
Career Highlights
Throughout his career, Calawa has worked with prestigious institutions, including the Massachusetts Institute of Technology. His work has significantly impacted the development of semiconductor technologies, particularly in enhancing the performance of photoconductive devices and integrated circuits.
Collaborations
Calawa has collaborated with notable individuals in the field, including Frank W. Smith and Michael J. Manfra. These collaborations have contributed to the advancement of semiconductor research and innovation.
Conclusion
Arthur R. Calawa's contributions to III-V semiconductor technology and his innovative patents highlight his role as a leading inventor in the field. His work continues to influence advancements in integrated circuits and photoconductive devices, showcasing the importance of innovation in technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile