The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 1995
Filed:
May. 15, 1992
Chang-Lee Chen, Sudbury, MA (US);
Leonard J Mahoney, East Walpole, MA (US);
Michael J Manfra, Tewksbury, MA (US);
Frank W Smith, Waltham, MA (US);
Arthur R Calawa, Wellesley, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A new III-V buffer or passivation material is described which is produced by low temperature growth (LTG) of III-V compounds. The material has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor FET devices, such as HEMT's, MESFET's and MISFET's. The LTG material is grown under ambient conditions which incorporate an excess of the more volatile of the III-V species into the grown material. The new material is crystalline, highly resistive, relatively insensitive to light, and can be overgrown with high quality III-V active layers or used as a passivation material to insulate and protect active device structures.