Massachusetts Institute of Technology

Other

Michael J Manfra

Arthur R Calawa

Frank W Smith

Chang-Lee Chen

Leonard J Mahoney

Joseph V Gormley

A new III-V buffer or passivation material is described which is produced by low temperature growth (LTG) of III-V compounds. The material has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor FET devices, such as HEMT's, MESFET's and MISFET's. The LTG material is grown under ambient conditions which incorporate an excess of the more volatile of the III-V species into the grown material. The new material is crystalline, highly resistive, relatively insensitive to light, and can be overgrown with high quality III-V active layers or used as a passivation material to insulate and protect active device structures.

III-V based integrated circuits having low temperature growth buffer or

A new III-IV buffer material is described which is produced by low temperature growth of III-V compounds by MBE that has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices, such as HEMT's, MESFET's and MISFET's. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300.degree. C. The new material is crystalline, highly resistive, optically inactive, and can be overgrown with high quality III-V active layers.

Method of making buffer layers for III-V devices using solid phase

A method and apparatus for polishing surfaces so as to provide surfaces which are optically flat and damage free. An etch solution is applied to a rotating surface and the surface to be prepared is caused by hydroplane on the etch solution, the hydroplaning action producing the desired optically flat surface.

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Tewksbury, MA, United States of America

Michael J Manfra