This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Raytheon Company. Active years: 2016-2022.
Location History:
- Waltham, MA (US) (2017)
- Plano, TX (US) (2016 - 2022)
Company Filing History:
Years Active: 2016-2022
Title: Michael G Hawkins: Innovator in Radio Frequency Technology
Introduction
Michael G Hawkins is a notable inventor based in Plano, TX (US). He has made significant contributions to the field of radio frequency technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of radio frequency media and circuits.
Latest Patents
One of his latest patents is titled "Free-form dual dual-conductor integrated radio frequency media." This invention features a substrate with a first dielectric layer and a second dielectric layer, along with two conductive layers that have distinct profiles. This innovative design allows for improved functionality in radio frequency applications. Another significant patent is "Circuit for improved FET switching speed." This invention aims to increase the switching speed of an RF FET in an RF shunt circuit by incorporating a smaller FET that quickly shunts the gate to ground, enhancing overall performance.
Career Highlights
Michael G Hawkins is currently employed at Raytheon Company, where he continues to develop cutting-edge technologies in the field of radio frequency. His expertise and innovative mindset have positioned him as a valuable asset to his team and the industry.
Collaborations
Some of his coworkers include David D Heston and Brian P Helm, who contribute to the collaborative environment that fosters innovation at Raytheon Company.
Conclusion
Michael G Hawkins is a distinguished inventor whose work in radio frequency technology has led to multiple patents and advancements in the field. His contributions continue to shape the future of radio frequency applications.