The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Nov. 26, 2019
Applicant:

Raytheon Company, Waltham, MA (US);

Inventors:

David D. Heston, Dallas, TX (US);

Mikel J. White, Murphy, TX (US);

Michael G. Hawkins, Plano, TX (US);

Assignee:

RAYTHEON COMPANY, Waltham, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P 3/08 (2006.01); H01P 1/203 (2006.01); H01P 11/00 (2006.01);
U.S. Cl.
CPC ...
H01P 3/081 (2013.01); H01P 1/203 (2013.01); H01P 1/20345 (2013.01); H01P 11/003 (2013.01);
Abstract

A free-from radio frequency (RF) media includes a substrate having a first dielectric layer formed thereon and a second dielectric layer on an upper surface of the first dielectric layer. A first conductive layer is formed on an upper surface of the first dielectric layer and has a first overall profile. A second conductive layer having a second overall profile is formed on an upper surface of the second dielectric layer such that the second dielectric layer is interposed between the first and second conductive layers. The first overall profile of the first conductive layer is different from the second overall profile of the second conductive layer.


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