The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Jan. 29, 2016
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Brian P. Helm, Waltham, MA (US);
Michael G. Hawkins, Waltham, MA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/0412 (2006.01); H03K 17/687 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/04123 (2013.01); H01L 27/0629 (2013.01); H03K 17/6871 (2013.01); H03K 2017/6875 (2013.01);
Abstract
In order to increase the switching speed of an RF FET in an RF shunt circuit, a second, smaller, FET, with respect to the size of the RF FET, is connected directly to the gate of the RF FET to shunt the gate to ground quickly when switched from the off-state to the on-state. The smaller FET switches faster, due to being smaller than the larger RF FET, but it is effectively open-circuited in terms of RF performance when off because it is so small.