Raytheon Company

Michael G Hawkins

David D Heston

Mikel J White

Brian P Helm

A free-from radio frequency (RF) media includes a substrate having a first dielectric layer formed thereon and a second dielectric layer on an upper surface of the first dielectric layer. A first conductive layer is formed on an upper surface of the first dielectric layer and has a first overall profile. A second conductive layer having a second overall profile is formed on an upper surface of the second dielectric layer such that the second dielectric layer is interposed between the first and second conductive layers. The first overall profile of the first conductive layer is different from the second overall profile of the second conductive layer.

Free-form dual dual-conductor integrated radio frequency media

In order to increase the switching speed of an RF FET in an RF shunt circuit, a second, smaller, FET, with respect to the size of the RF FET, is connected directly to the gate of the RF FET to shunt the gate to ground quickly when switched from the off-state to the on-state. The smaller FET switches faster, due to being smaller than the larger RF FET, but it is effectively open-circuited in terms of RF performance when off because it is so small.

Circuit for improved FET switching speed

A bias circuit includes second order process variation compensation in a current source topology having a compensation transistor operating in saturation mode as a current source. An additional compensation transistor is biased to operate in a linear mode to provide an active resistor to vary a control voltage applied to the saturation mode compensation transistor and widen the range of sourced control current, thus widening the achievable range of the control voltage applied to the biasing transistor to produce a predetermined level of bias current despite process variations. The additional compensation transistor has been shown to be able to compensate for another approximately 20-25% of the induced variations leaving less than approximately 10% and preferably less than 5% variation in the bias current from the predetermined level at certain bias conditions and over typical fabrication process variations.

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Plano, TX, United States of America

Michael G Hawkins