Changhua, Taiwan

Meng-Fu You


Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 93(Granted Patents)


Location History:

  • Hsin-Chu, TW (2014 - 2016)
  • Changhua, TW (2013 - 2018)

Company Filing History:


Years Active: 2013-2018

where 'Filed Patents' based on already Granted Patents

9 patents (USPTO):

Title: Meng-Fu You: Innovator in Semiconductor Technology

Introduction

Meng-Fu You is a prominent inventor based in Changhua, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on improving device characteristics and modeling techniques in semiconductor fabrication.

Latest Patents

Among his latest patents is a method for determining proximity effect parameters for non-rectangular semiconductor structures. This patent presents a curve-fitting procedure that adapts to determine the impact of narrow width-related effects on device characteristics by comparing two-dimensional (2D) and three-dimensional (3D) device simulations. Another notable patent involves 3D device modeling for FinFET devices. This innovation provides techniques and systems for 3D modeling of FinFET devices and detecting variations in design layouts based on these models. The method evaluates fin height variations and voltage threshold variations, allowing for modifications in design layouts to decrease discrepancies.

Career Highlights

Meng-Fu You has worked with notable organizations such as Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University. His experience in these institutions has allowed him to develop and refine his innovative approaches to semiconductor technology.

Collaborations

He has collaborated with esteemed colleagues, including Chung-Min Fu and Po-Hsiang Huang, contributing to advancements in the semiconductor field.

Conclusion

Meng-Fu You's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor devices.

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